The request to revise ECGR 5192

Date: May 28, 2013
To: College of Engineering
From: Office of Academic Affairs
Approved On: May 23, 2013
Approved by: Graduate Council
Implementation Date: Spring 2014

Note: Deletions are strikethroughs. Insertions are underlined.

Catalog Copy

ECGR 5192. Solid State Microelectronics IIMicroelectronic devices. (3) Prerequisites: ECGR 31213122 and 3133 or their equivalents. PN-junctions and Schottky junctions; bipolar and field effect transistors; optoelectronic and heterojunction devices; lithography and integrated circuits; microwave devices; light emitting devices and detectors; quantum devices using superlattices; quantum wells and quantum dots; material preparation and characterization; and measurement techniques.Advanced device concepts for MOSFET, bipolar, and CMOS integrated circuits. Gate length, transit time, and power-frequency limits. Device scaling concepts. Tunneling and avalanche devices, and hot electron behavior. Device and interconnect reliability and failure and device interconnects. Submicron channel, MODFET, and quantum well devices. High frequency solid state devices. Limits of switching speed. Solid state power devices. Credit will not be given for ECGR 5192 where credit has been given for ECGR 4134. (SpringFall)